MFTG65N29D88
Description
Product Characteristics
| P/N Series | MFTG65N29D88 |
| Description | GaN Transistor N 650V 29A 188W DFN8x8 |
| FET-Type | N |
| Drain to Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) @ 25°C | 29A |
| Rds On (Max) @ Id, Vgs | 80mΩ |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF |
| Power Dissipation (Max) | 188W |
| Package / Case | DFN8x8 |
| Feature | LV GaN HEMT |
Environmental Classifications
| RoHS Status | ROHS Compliant |
| Reach Status | REACH Unaffected |
