MFT65P20AT263

Product Characteristics 

Part Number MFT65P20AT263
FET-Type P
Description Mosfet P 650V 20A 205W TO-263
Drain to Source Voltage (Vdss) 650V
Continuous Drain Current (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 180mΩ
Gate Charge (Qg) (Max) @ Vgs 35nC
Input Capacitance (Ciss) (Max) @ Vds 1475pF
Power Dissipation (Max) 205W
Operating Temperature -55 ~ 150°C
Application General Purposes
Mounting Type Surface Mount
Package / Case TO-263
Packaging Tape and Real

Environmental Classifications

RoHS Status ROHS Compliant
REACH Status REACH Unaffected