MFT100N3A0T252

Product Characteristics


P/N Series MFT100N3A0T252
Description Mosfet N 1000V 3A 111W TO-252
FET-Type N
Drain to Source Voltage (Vdss) 1000V
Continuous Drain Current (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 6000mΩ
Gate Charge (Qg) (Max) @ Vgs 25nC
Input Capacitance (Ciss) (Max) @ Vds 485pF
Power Dissipation (Max) 111W
Package / Case TO-252
Application General Purpose


Environmental Classifications


RoHS Status ROHS Compliant
Reach Status REACH Unaffected