Series Number
|
MFT32N4A0S236
|
Description
|
SOT-23-6
|
Lead Free Status / RoHS Status
|
Lead free / RoHS Compliant
|
Moisture Sensitivity Level (MSL)
|
1 (Unlimited)
|
Additional Information
|
–
|
Product Characteristics
FET-Type | Dual N-Channel Dual |
Feature | High Density Cell Design for Ultra Low On-Resistance |
Drain to Source Voltage | 30V |
Continuous Drain Current | 4A |
Operating Temperature | -55 ~ 150 °C |
Package / Case | SOT-23-6 |
Applications | Switch Load, PWM Application, etc. |
Mounting Type | Surface Mount |
Gate Threshold Voltage – max. | 2.1V |
Static Drain-Source On-Resistance – max. | 70mΩ |
Total Gate Charge – typ. | 5.87nC |
Input Capacitance – typ. | 350pF |
Power Dissipation @25°C | 1.25W |
Drain Current – Pulsed | 16A |
Features | Advanced Trench Process Technology |
Series | MFT-SOT-23-6 |
Packaging | Tape and Reel |
Part Status | Active |